On the recombination centers of iron-gallium pairs in Ga-doped silicon
Nærland, T.U. , Bernardini, S. , Haug, H. , Grini, S. , Vines, L. , Stoddard, N. , Bertoni, M.Journal of applied physics, Vol. 122, no. 8, art. no. 085703
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- Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.
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