Electrical properties of compensated N- and P-type monocrystalline silicon
Søndenå, R.
,
Holt, A.
,
Søiland, A.-K.
European Photovoltaic Solar Energy Conference and Exhibition, 26, Hamburg, 2011-09-05--09-11. EU PVSEC Proceedings, 26, 1824-1828
- Publ. year
- 2011
- Publ. type
- paper
- Abstract
- Light induced degradation caused by boron-oxygen complexes in compensated Czochralski-wafers produced from 50% Elkem Solar Silicon® (ESSTM) and 50% non-compensated polysilicon is studied. Minority carrier lifetimes are measured using QssPC calibrated photoluminescence imaging and illumination with 1 Sun is used to induce the degradation. It has previously been shown than the degradation in compensated silicon depends on the net doping. Light induced degradation can therefore be reduced by decreasing the net doping. Lifetimes in Cz-wafers are improved despite an increase in the mix-in ratio of the compensated Elkem Solar Silicon®. Beneficial effects of compensation are seen in ptype wafers resulting in increased lifetimes. Degradation is observed also in the n-type wafers from 50% ESSTM.
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