Silicon whisker growth using hot filament reactor with hydrogen as source gas
Nagayoshi, H.
,
Nordmark, H.
,
Holmestad, R.
,
Matsumoto, N.
,
Nishimura, S.
,
Terashima, K.
,
Walmsley, J.C.
,
Ulyashin, A.
Japanese journal of applied physics. Part 1, Vol. 47, no. 6 pt. 1 (13 June 2008), 4807-4809
- Publ. year
- 2008
- Publ. type
- article
- Abstract
- Si whisker growth on a silicon substrate, using only pure hydrogen gas flow in a hot filament chemical vapor deposition reactor, has been studied by scanning and transmission electron microscopy. At the initial stage of the growth, tungstensilicide particles are formed due to hydrogen radical etching by the filament. Simultanously the Si substrate exhibits a surface texturing. After long residence times of hydrogen gas in the reactor, silicon whiskers, with diameters between 10 and 50 nm, were observed on the textured silicon surface. Each whisker has a silicide particle at its tip. A mechanism of silicon whiskers growth using this method with hydrogen gas is proposed. © 2008 The Japan Society of Applied Physics.
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