Enhanced Phosphorus Diffusion at Microstructural Defects in Multicrystalline Silicon
Andreas Bentzen, Bengt Gunnar Svensson, and Arve Holt, Technical Digest of the 14th International Photovoltaic Science and Engineering Conference, Bangkok, Thailand, (2004) 405
We have investigated the diffusion of phosphorus in multicrystalline
silicon during solar cell emitter formation by secondary ion mass
spectrometry (SIMS). From the experimental results, we observe
significantly increased ingrain diffusion depths in areas of structural
disorder that are not readily observed by the naked eye. It is believed
that this effect is due to increased concentrations of silicon
selfinterstitials in the areas surrounding the defects, causing an
enhanced transient response of elemental phosphorus diffusion.
