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Double layer anti-reflective coatings for silicon solar cells

Daniel Nilsen Wright, Erik Stensrud Marstein, and Arve Holt, Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Orlando, Florida, USA, (2005) 1237-1240

In this paper simulated single and double layer anti-reflective coatings based on the refractive index limits of silicon nitride (SiN) and silicon oxide (SiO2) are presented. The best structure combines SiN and SiO2, resulting in a reflectance of 0.044 based on the AM1.5 photon flux from 300-1150nm. PC1D solar cell simulations show that an increase in short circuit current density of 6.4% was pos-sible by replacing an optimised single SiN layer with the abovementioned double layer.

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