Double layer anti-reflective coatings for silicon solar cells
In this paper simulated single and double layer anti-reflective
coatings based on the refractive index limits of silicon nitride (SiN)
and silicon oxide (SiO2) are presented. The best structure combines SiN
and SiO2, resulting in a reflectance of 0.044 based on the AM1.5 photon
flux from 300-1150nm. PC1D solar cell simulations show that an increase
in short circuit current density of 6.4% was pos-sible by replacing an
optimised single SiN layer with the abovementioned double layer.
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