Correspondence between sheet resistance and emitter profile of phoshorus diffused emitters from a spray-on dopant
The evolution of the emitter sheet resistance upon phosphorus
in-diffusion from a spray-on dopant has been studied in the temperature
range 840-990°C. In complement with investigations of emitter diffusion
profiles, by both electrochemical capacitance-voltage profiling and
secondary ion mass spectrometry, we find that the sheet resistance is
determined directly by the depth of the flat plateau near the surface
in profiles of electrically active phosphorus. Thus, with respect to
sheet resistance, an emitter can be regarded as a constant
concentration abrupt box layer, with thickness and concentration
specified by the flat plateau, irrespective of the actual profile at
lower concentrations. Therefore, independent optimization of the
emitter profile at lower concentrations is enabled.
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